MLC NAND Technology
TLC NAND Technology
General
Interface
SAS 6/12Gb/s Supports Wide Port @ 12Gb/s
SAS 6/12Gb/s Supports Wide Port @ 12Gb/s
Capacity (GB)
10DW/D: 3.2TB / 1.6TB / 800GB / 400GB
3DW/D: 3.2TB / 1.6TB / 800GB / 400GB
7.68TB / 3.84TB / 1.92TB / 960GB / 480GB
Form Factor
2.5-inch SFF
2.5-inch SFF
Flash Memory Technology
3D Multi-Level Cell (MLC) NAND
3D Tri-Level Cell (TLC) NAND
Performance
Sequential Read (max MB/s, 128KiB)
2100 | 2100
2100
Sequential Write (max MB/s, 128KiB)
2050 | 2050
1250
Random Read (max IOPS, 4KiB)
400K | 400K
400K
Random Write (max IOPS, 4KiB)
200K | 170K
85K
Mixed Random Read/Write (max IOPS 70%R/30%W, 4KiB)
285K | 265K
170K
Latency
85 μs | 85 μs
105 μs
Reliability
Error Rate (non-recoverable, bits read)
1 in 1017
1 in 1017
Annual Failure Rate (AFR)
0.35%
0.35%
Availability (hrs/day x days/wk)
24x7
24x7
Limited Warranty (yrs)
5 years or Max PB written, whichever occurs first
5 years or Max PB written, whichever occurs first
Endurance (max TB written)
10DW/D: 53100 / 26500 / 13200 / 7300
3DW/D: 15900 / 7900 / 3900 / 1980
13100 / 6600 / 3150 / 960
Endurance
10DW/D | 3DW/D
~1DW/D
Power
Requirement
+5 VDC, +12VDC
+5 VDC, +12VDC
Operating (W, typical)
9, 11, 14
9, 11, 14
Idle (W)
<3.2TB: 3.7, ≥ 3.2TB: 4.7 (max)
<3.2TB: 3.7, ≥ 3.2TB: 4.7 (max)
Physical Size
Dimensions (width x depth, mm)
70.1 x 100.6
70.1 x 100.6
Environmental (operating)
Ambient Temperature
0º to 75º C
0º to 75º C
Shock (half-sine wave)
500G (2ms)
500G (2ms)
Vibration (5 to 700 Hz)
2.16 G RMS, random (XYZ)
2.16 G RMS, random (XYZ)
Environmental (non-operating)
Ambient Temperature
-40º to 80º C
-40º to 80º C
Shock (half-sine wave)
1000G (0.5ms)
1000G (0.5ms)